The time-resolved spectroscopy of InGaAs/AlGaAs heterostructures with asymmetric funnel-shape quantum wells for near- and mid-IR lasing
Identifieur interne : 000443 ( Russie/Analysis ); précédent : 000442; suivant : 000444The time-resolved spectroscopy of InGaAs/AlGaAs heterostructures with asymmetric funnel-shape quantum wells for near- and mid-IR lasing
Auteurs : RBID : Pascal:04-0223320Descripteurs français
- Pascal (Inist)
- Spectre résolution temporelle, Rayonnement IR, Transition interbande, Couleur, Durée vie, Etat fondamental, Etat excité, Photoluminescence, Structure électronique, Dépendance temps, Inversion population, Composé ternaire, Gallium arséniure, Indium arséniure, Aluminium arséniure, Semiconducteur, Hétérostructure, Puits quantique, Composé minéral, As Ga In, InGaAs, Al As Ga, AlGaAs, 78, As Ga, GaAs.
- Wicri :
- concept : Composé minéral.
English descriptors
- KwdEn :
- Aluminium arsenides, Color, Electronic structure, Excited states, Gallium arsenides, Ground states, Heterostructures, Indium arsenides, Infrared radiation, Inorganic compounds, Interband transitions, Lifetime, Photoluminescence, Population inversion, Quantum wells, Semiconductor materials, Ternary compounds, Time dependence, Time resolved spectra.
Abstract
The dynamics of interband transitions in InGaAs/AlGaAs heterostructures with funnel-shaped quantum wells, when a narrow and deep well is positioned asymmetrically in wide and shallow ones, has been studied experimentally. These structures have been proposed as a dual-colour laser in mid- and near-IR range simultaneously. The lifetime of electrons in the ground and excited states in the quantum wells has been determined by the time of the photoluminescence intensity decline. The obtained lifetime values allow precise identification of peaks in the photoluminescence spectra and a deep insight into the process of high electron states populating. The experimentally found electron lifetime for the interband transitions corresponds on the order of magnitude with the interband transitions lifetime in GaAs. Analysis of the photoluminescence spectra as well as the time dependence of the photoluminescence intensity decline indicates a possibility of population inversion achievement in these structures under high excitation.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">The time-resolved spectroscopy of InGaAs/AlGaAs heterostructures with asymmetric funnel-shape quantum wells for near- and mid-IR lasing</title><author><name sortKey="Gaponova, D M" uniqKey="Gaponova D">D. M. Gaponova</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute for Physics of Microstructures RAS, GSP-105</s1><s2>603950 N Novgorod</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>603950 N Novgorod</wicri:noRegion></affiliation></author><author><name sortKey="Aleshkin, V Ya" uniqKey="Aleshkin V">V. Ya Aleshkin</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute for Physics of Microstructures RAS, GSP-105</s1><s2>603950 N Novgorod</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>603950 N Novgorod</wicri:noRegion></affiliation></author><author><name sortKey="Antonov, A V" uniqKey="Antonov A">A. V. Antonov</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute for Physics of Microstructures RAS, GSP-105</s1><s2>603950 N Novgorod</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>603950 N Novgorod</wicri:noRegion></affiliation></author><author><name sortKey="Revin, D G" uniqKey="Revin D">D. G. Revin</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute for Physics of Microstructures RAS, GSP-105</s1><s2>603950 N Novgorod</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>603950 N Novgorod</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Physics and Astronomy, University of Sheffield</s1><s2>Sheffield S3 7RH</s2><s3>GBR</s3><sZ>4 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>Royaume-Uni</country><wicri:noRegion>Sheffield S3 7RH</wicri:noRegion></affiliation></author><author><name sortKey="Vorob Ev, L E" uniqKey="Vorob Ev L">L. E. Vorob Ev</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>St Petersburg State Technical University</s1><s2>195251 St Petersburg</s2><s3>RUS</s3><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>St Petersburg State Technical University</wicri:noRegion></affiliation></author><author><name sortKey="Firsov, D A" uniqKey="Firsov D">D. A. Firsov</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>St Petersburg State Technical University</s1><s2>195251 St Petersburg</s2><s3>RUS</s3><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>St Petersburg State Technical University</wicri:noRegion></affiliation></author><author><name sortKey="Shalygin, V A" uniqKey="Shalygin V">V. A. Shalygin</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>St Petersburg State Technical University</s1><s2>195251 St Petersburg</s2><s3>RUS</s3><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>St Petersburg State Technical University</wicri:noRegion></affiliation></author><author><name sortKey="Ustinov, V M" uniqKey="Ustinov V">V. M. Ustinov</name><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Ioffe Physico-Technical Institute</s1><s2>194021 St Petersburg</s2><s3>RUS</s3><sZ>8 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>Ioffe Physico-Technical Institute</wicri:noRegion></affiliation></author><author><name sortKey="Cockburn, J W" uniqKey="Cockburn J">J. W. Cockburn</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Physics and Astronomy, University of Sheffield</s1><s2>Sheffield S3 7RH</s2><s3>GBR</s3><sZ>4 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>Royaume-Uni</country><wicri:noRegion>Sheffield S3 7RH</wicri:noRegion></affiliation></author><author><name sortKey="Fox, A M" uniqKey="Fox A">A. M. Fox</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Physics and Astronomy, University of Sheffield</s1><s2>Sheffield S3 7RH</s2><s3>GBR</s3><sZ>4 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>Royaume-Uni</country><wicri:noRegion>Sheffield S3 7RH</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">04-0223320</idno><date when="2004">2004</date><idno type="stanalyst">PASCAL 04-0223320 INIST</idno><idno type="RBID">Pascal:04-0223320</idno><idno type="wicri:Area/Main/Corpus">00B867</idno><idno type="wicri:Area/Main/Repository">00AA48</idno><idno type="wicri:Area/Russie/Extraction">000443</idno></publicationStmt><seriesStmt><idno type="ISSN">0268-1242</idno><title level="j" type="abbreviated">Semicond. sci. technol.</title><title level="j" type="main">Semiconductor science and technology</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aluminium arsenides</term><term>Color</term><term>Electronic structure</term><term>Excited states</term><term>Gallium arsenides</term><term>Ground states</term><term>Heterostructures</term><term>Indium arsenides</term><term>Infrared radiation</term><term>Inorganic compounds</term><term>Interband transitions</term><term>Lifetime</term><term>Photoluminescence</term><term>Population inversion</term><term>Quantum wells</term><term>Semiconductor materials</term><term>Ternary compounds</term><term>Time dependence</term><term>Time resolved spectra</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Spectre résolution temporelle</term><term>Rayonnement IR</term><term>Transition interbande</term><term>Couleur</term><term>Durée vie</term><term>Etat fondamental</term><term>Etat excité</term><term>Photoluminescence</term><term>Structure électronique</term><term>Dépendance temps</term><term>Inversion population</term><term>Composé ternaire</term><term>Gallium arséniure</term><term>Indium arséniure</term><term>Aluminium arséniure</term><term>Semiconducteur</term><term>Hétérostructure</term><term>Puits quantique</term><term>Composé minéral</term><term>As Ga In</term><term>InGaAs</term><term>Al As Ga</term><term>AlGaAs</term><term>78</term><term>As Ga</term><term>GaAs</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Composé minéral</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The dynamics of interband transitions in InGaAs/AlGaAs heterostructures with funnel-shaped quantum wells, when a narrow and deep well is positioned asymmetrically in wide and shallow ones, has been studied experimentally. These structures have been proposed as a dual-colour laser in mid- and near-IR range simultaneously. The lifetime of electrons in the ground and excited states in the quantum wells has been determined by the time of the photoluminescence intensity decline. The obtained lifetime values allow precise identification of peaks in the photoluminescence spectra and a deep insight into the process of high electron states populating. The experimentally found electron lifetime for the interband transitions corresponds on the order of magnitude with the interband transitions lifetime in GaAs. Analysis of the photoluminescence spectra as well as the time dependence of the photoluminescence intensity decline indicates a possibility of population inversion achievement in these structures under high excitation.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0268-1242</s0></fA01><fA02 i1="01"><s0>SSTEET</s0></fA02><fA03 i2="1"><s0>Semicond. sci. technol.</s0></fA03><fA05><s2>19</s2></fA05><fA06><s2>4</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>The time-resolved spectroscopy of InGaAs/AlGaAs heterostructures with asymmetric funnel-shape quantum wells for near- and mid-IR lasing</s1></fA08><fA09 i1="01" i2="1" l="ENG"><s1>Special issue featuring papers from the International Conference on Nonequilibrium Carrier Dynamics in Semiconductors</s1></fA09><fA11 i1="01" i2="1"><s1>GAPONOVA (D. M.)</s1></fA11><fA11 i1="02" i2="1"><s1>ALESHKIN (V. Ya)</s1></fA11><fA11 i1="03" i2="1"><s1>ANTONOV (A. V.)</s1></fA11><fA11 i1="04" i2="1"><s1>REVIN (D. G.)</s1></fA11><fA11 i1="05" i2="1"><s1>VOROB'EV (L. E.)</s1></fA11><fA11 i1="06" i2="1"><s1>FIRSOV (D. A.)</s1></fA11><fA11 i1="07" i2="1"><s1>SHALYGIN (V. A.)</s1></fA11><fA11 i1="08" i2="1"><s1>USTINOV (V. M.)</s1></fA11><fA11 i1="09" i2="1"><s1>COCKBURN (J. W.)</s1></fA11><fA11 i1="10" i2="1"><s1>FOX (A. M.)</s1></fA11><fA12 i1="01" i2="1"><s1>REGGIANI (L.)</s1><s9>ed.</s9></fA12><fA12 i1="02" i2="1"><s1>BORDONE (P.)</s1><s9>ed.</s9></fA12><fA12 i1="03" i2="1"><s1>BRUNETTI (R.)</s1><s9>ed.</s9></fA12><fA14 i1="01"><s1>Institute for Physics of Microstructures RAS, GSP-105</s1><s2>603950 N Novgorod</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></fA14><fA14 i1="02"><s1>Department of Physics and Astronomy, University of Sheffield</s1><s2>Sheffield S3 7RH</s2><s3>GBR</s3><sZ>4 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></fA14><fA14 i1="03"><s1>St Petersburg State Technical University</s1><s2>195251 St Petersburg</s2><s3>RUS</s3><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></fA14><fA14 i1="04"><s1>Ioffe Physico-Technical Institute</s1><s2>194021 St Petersburg</s2><s3>RUS</s3><sZ>8 aut.</sZ></fA14><fA15 i1="01"><s1>Dipartimento di Ingegneria dell' Innovazione, INFM-NNL National Nanotechnology Laboratory, Università di Lecce, Via Arnesano s/n</s1><s2>73100 Lecce</s2><s3>ITA</s3><sZ>1 aut.</sZ></fA15><fA15 i1="02"><s1>INFM-S3 National Research Center on nanoStructures and bioSystems at Surfaces, Dipartimento di Fisica, Università di Modena e Reggio Emilia Via Campi 213/A</s1><s2>41100 Modena</s2><s3>ITA</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ></fA15><fA20><s2>S273-S275</s2></fA20><fA21><s1>2004</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>21041</s2><s5>354000116784720900</s5></fA43><fA44><s0>0000</s0><s1>© 2004 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>7 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>04-0223320</s0></fA47><fA60><s1>P</s1><s2>C</s2></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Semiconductor science and technology</s0></fA64><fA66 i1="01"><s0>GBR</s0></fA66><fC01 i1="01" l="ENG"><s0>The dynamics of interband transitions in InGaAs/AlGaAs heterostructures with funnel-shaped quantum wells, when a narrow and deep well is positioned asymmetrically in wide and shallow ones, has been studied experimentally. These structures have been proposed as a dual-colour laser in mid- and near-IR range simultaneously. The lifetime of electrons in the ground and excited states in the quantum wells has been determined by the time of the photoluminescence intensity decline. The obtained lifetime values allow precise identification of peaks in the photoluminescence spectra and a deep insight into the process of high electron states populating. The experimentally found electron lifetime for the interband transitions corresponds on the order of magnitude with the interband transitions lifetime in GaAs. Analysis of the photoluminescence spectra as well as the time dependence of the photoluminescence intensity decline indicates a possibility of population inversion achievement in these structures under high excitation.</s0></fC01><fC02 i1="01" i2="3"><s0>001B70H</s0></fC02><fC02 i1="02" i2="X"><s0>001D03</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Spectre résolution temporelle</s0><s5>02</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Time resolved spectra</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Rayonnement IR</s0><s5>03</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Infrared radiation</s0><s5>03</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Transition interbande</s0><s5>04</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Interband transitions</s0><s5>04</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Couleur</s0><s5>05</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Color</s0><s5>05</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Durée vie</s0><s5>06</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Lifetime</s0><s5>06</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Etat fondamental</s0><s5>07</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Ground states</s0><s5>07</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Etat excité</s0><s5>08</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Excited states</s0><s5>08</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Photoluminescence</s0><s5>09</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Photoluminescence</s0><s5>09</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Structure électronique</s0><s5>10</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Electronic structure</s0><s5>10</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Dépendance temps</s0><s5>11</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Time dependence</s0><s5>11</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Inversion population</s0><s5>12</s5></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Population inversion</s0><s5>12</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Composé ternaire</s0><s5>15</s5></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Ternary compounds</s0><s5>15</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Gallium arséniure</s0><s2>NK</s2><s5>16</s5></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Gallium arsenides</s0><s2>NK</s2><s5>16</s5></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Indium arséniure</s0><s2>NK</s2><s5>17</s5></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Indium arsenides</s0><s2>NK</s2><s5>17</s5></fC03><fC03 i1="15" i2="3" l="FRE"><s0>Aluminium arséniure</s0><s2>NK</s2><s5>18</s5></fC03><fC03 i1="15" i2="3" l="ENG"><s0>Aluminium arsenides</s0><s2>NK</s2><s5>18</s5></fC03><fC03 i1="16" i2="3" l="FRE"><s0>Semiconducteur</s0><s5>19</s5></fC03><fC03 i1="16" i2="3" l="ENG"><s0>Semiconductor materials</s0><s5>19</s5></fC03><fC03 i1="17" i2="3" l="FRE"><s0>Hétérostructure</s0><s5>20</s5></fC03><fC03 i1="17" i2="3" l="ENG"><s0>Heterostructures</s0><s5>20</s5></fC03><fC03 i1="18" i2="3" l="FRE"><s0>Puits quantique</s0><s5>21</s5></fC03><fC03 i1="18" i2="3" l="ENG"><s0>Quantum wells</s0><s5>21</s5></fC03><fC03 i1="19" i2="3" l="FRE"><s0>Composé minéral</s0><s5>48</s5></fC03><fC03 i1="19" i2="3" l="ENG"><s0>Inorganic compounds</s0><s5>48</s5></fC03><fC03 i1="20" i2="3" l="FRE"><s0>As Ga In</s0><s4>INC</s4><s5>52</s5></fC03><fC03 i1="21" i2="3" l="FRE"><s0>InGaAs</s0><s4>INC</s4><s5>53</s5></fC03><fC03 i1="22" i2="3" l="FRE"><s0>Al As Ga</s0><s4>INC</s4><s5>54</s5></fC03><fC03 i1="23" i2="3" l="FRE"><s0>AlGaAs</s0><s4>INC</s4><s5>55</s5></fC03><fC03 i1="24" i2="3" l="FRE"><s0>78</s0><s4>INC</s4><s5>56</s5></fC03><fC03 i1="25" i2="3" l="FRE"><s0>As Ga</s0><s4>INC</s4><s5>92</s5></fC03><fC03 i1="26" i2="3" l="FRE"><s0>GaAs</s0><s4>INC</s4><s5>93</s5></fC03><fN21><s1>145</s1></fN21><fN82><s1>OTO</s1></fN82></pA><pR><fA30 i1="01" i2="1" l="ENG"><s1>HCIS International Conference on Nonequilibrium Carrier Dynamics in Semiconductors</s1><s2>13</s2><s3>Modena ITA</s3><s4>2003</s4></fA30></pR></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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